Cart
0
Product
Products
(empty)
No products
To be determined
Shipping
$0.00
Total
Product successfully added to your shopping cart
Quantity
Total
There are 0 items in your cart.
There is 1 item in your cart.
Total products
Total shipping
To be determined
Total
View larger
IEC 63284 Ed. 1.0 b:2022
M00003367
New product
IEC 63284 Ed. 1.0 b:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
standard by International Electrotechnical Commission, 04/01/2022
In stock
More info
Full Description
This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.